Comparative Study of Sub-Micron Buried-Channel Delta Doped Mosfets

  • K. Diawuo
DOI: https://doi.org/10.4314/just.v19i1,2&3.852
Keywords: Delta-doped Buried Channel MOSFET (d-BCMOSFET), Conventional MOSFET, Drain Induced Barrier Lowering (DIBL), Subthreshold, Speed, Cut-Off Frequency

Abstract

In this work, the performance of a deep – submicron ᵟ doped MOSFET has been evaluated in terms of its conventional counterpart using 2 – D stimulation. The comparison was based on the scaling law relationships reported in the literature and relative data is given for subthreshold leakage currents, DIBL, speed and cut – off frequencies. A performance figure of merit indicates the conventional device out performs that performs that of the ᵟdoped MOSFET by 30%.

Published
2016-02-04
How to Cite
Diawuo, K. (2016). Comparative Study of Sub-Micron Buried-Channel Delta Doped Mosfets . Journal of Science and Technology, 19(1,2&3). https://doi.org/10.4314/just.v19i1,2&3.852
Issue
Vol 19 No 1,2&3 (1999)
Section
Articles