Study of Hot-Carrier Induced Degradation in Delta-Doped and Conventional Mosfets.

  • Kwesi Diawuo
DOI: https://doi.org/10.4314/just.v20i1,2&3.830
Keywords: Reliability, Delta-doped, Conventional, MOSFET, Subthreshold, Transconductance, Stress, 2-D (Two Dimensional)

Abstract

A DC stress analysis has been performed to assess the reliability of delta – doped and conventional MOSFETSs. The experimental results and 2 – D computer simulations indicates that there is little variation in the threshold voltage, trans-conductance and drain current in the delta MOSFET due to stress than in conventional MOSFET

Published
2016-02-05
How to Cite
Diawuo, K. (2016). Study of Hot-Carrier Induced Degradation in Delta-Doped and Conventional Mosfets . Journal of Science and Technology, 20(1,2&3). https://doi.org/10.4314/just.v20i1,2&3.830
Issue
Vol 20 No 1,2&3 (2000)
Section
Articles